Methods and apparatus for cleaning semiconductor wafers

ABSTRACT

An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

FIELD OF THE INVENTION

This application is a national stage entry of PCT/CN2007/070234, whichwas filed Jul. 5, 2007. The present invention generally relates to amethod and apparatus for cleaning semiconductor wafer. Moreparticularly, using rotation plate coupled with and without ultra sonicand mega sonic device to increase particle and contamination removalefficiency, and at the same time to realize minimum material loss insemiconductor wafer structure.

BACKGROUND OF THE INVENTION

Semiconductor devices are manufactured or fabricated on semiconductorwafers using a number of different processing steps to create transistorand interconnection elements. To electrically connect transistorterminals associated with the semiconductor wafer, conductive (e.g.,metal) trenches, vias, and the like are formed in dielectric materialsas part of the semiconductor device. The trenches and vias coupleelectrical signals and power between transistors, internal circuit ofthe semiconductor devices, and circuits external to the semiconductordevice.

In forming the interconnection elements the semiconductor wafer mayundergo, for example, masking, etching, and deposition processes to formthe desired electronic circuitry of the semiconductor devices. Inparticular, multiple masking and plasma etching step can be performed toform a pattern of recessed areas in a dielectric layer on asemiconductor wafer that serve as trenches and vias for theinterconnections. In order to removal particles and contaminations intrench and via post etching or photo resist ashing, a wet cleaning stepis necessary. Especially, when device manufacture node migrating to 65nm and beyond, the side wall loss in trench and via during is crucialfor maintaining the critical dimension. In order to reduce oreliminating the side wall loss, it is important to use moderate, dilutechemicals, or sometime de-ionized wafer only. However, the dilutechemical or de-ionized water usually is not efficient to remove particlein the trench and via. Therefore the mechanical force such as ultrasonic or mega sonic is needed in order to remove those particlesefficiently. Ultra sonic and mega sonic wave will apply mechanical forceto wafer structure such as trenches and vias, the power intensity andpower distribution is key parameters to control the mechanical forcewithin the damage limit and at same time efficiently to remove theparticles.

Mega sonic energy coupled with nozzle to clean semiconductor wafer isdisclosed in U.S. Pat. No. 4,326,553. The fluid is pressurized and megasonic energy is applied to the fluid by a mega sonic transducer. Thenozzle is shaped to provide a ribbon-like jet of cleaning fluidvibrating at mega sonic frequencies for the impingement on the surface.

A source of energy vibrates an elongated probe which transmits theacoustic energy into the fluid is disclosed in U.S. Pat. No. 6,039,059.In one arrangement, fluid is sprayed onto both sides of a wafer while aprobe is positioned close to an upper side. In another arrangement, ashort probe is positioned with its end surface close to the surface, andthe probe is moved over the surface as wafer rotates.

A source of energy vibrates a rod which rotates around it axis parallelto wafer surface is disclosed in U.S. Pat. No. 6,843,257 B2. The rodsurface is etched to curve groves, such as spiral groove. It is neededto have a better cleaning method for cleaning particles andcontamination on surface of wafer or substrate with higher efficiencyand lower mechanical damages.

SUMMARY OF THE INVENTION

One embodiment of the present invention is to disclose a plate to bepositioned close to surface of wafer or substrate. The plate is moveableparallel to surface of wafer or substrate. The plate is rotated aroundan axis vertical to surface of wafer or substrate.

Another embodiment of the present invention is to disclose platevibrated by ultra sonic or mega sonic transducer. The plate is moveableparallel to surface of wafer or substrate. The plate is rotated aroundan axis vertical to surface of wafer or substrate.

Another embodiment of the present invention is to disclose a platevibrated by ultra sonic or mega sonic transducer. The rotating platesurface facing surface of wafer or substrate has groves, regularpatterns, and irregular patterns to enhance the cleaning efficiency. Theplate is moveable parallel to surface of wafer or substrate. The plateis rotated around an axis vertical to surface of wafer or substrate.

Another embodiment of the present invention is to disclose a platevibrated by ultra sonic or mega sonic transducer. The rotating plate hasholes to deliver cleaning chemicals or de-ionized water to wafersurface. The plate is moveable parallel to surface of wafer orsubstrate. The plate is rotated around an axis vertical to surface ofwafer or substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-B depict an exemplary wafer cleaning device;

FIGS. 2A-2E depict an exemplary wafer cleaning process;

FIG. 3 depicts another exemplary wafer cleaning device;

FIG. 4 depicts another exemplary wafer cleaning device;

FIGS. 5A-5B depict another exemplary wafer cleaning device;

FIGS. 6A-6B depict another exemplary wafer cleaning device;

FIGS. 7A-7B depict another exemplary wafer cleaning device;

FIGS. 8A-8B depict another exemplary wafer cleaning device;

FIGS. 9A-9B depict another exemplary wafer cleaning device;

FIGS. 10A-10B depict another exemplary wafer cleaning device;

FIGS. 11A-11B depict another exemplary wafer cleaning device;

FIGS. 12A-12B depict another exemplary wafer cleaning device;

FIGS. 13A-13B depict another exemplary wafer cleaning device;

FIGS. 14A-14B depict another exemplary wafer cleaning device;

FIGS. 15A-15B depict another exemplary wafer cleaning device;

FIGS. 16A-16B depict another exemplary wafer cleaning device;

FIGS. 17A-17B depict another exemplary wafer cleaning device;

FIGS. 18A-18B depict another exemplary wafer cleaning device;

FIGS. 19A-19B depict another exemplary wafer cleaning device;

FIGS. 20A-20B depict another exemplary wafer cleaning device;

FIGS. 21A-21B depict another exemplary wafer cleaning device;

FIGS. 22A-22B depict another exemplary wafer cleaning device;

FIGS. 23A-23D depict another exemplary wafer cleaning device;

FIGS. 24A-24C depict another exemplary wafer cleaning device;

FIGS. 25A-25B depict another exemplary wafer cleaning device;

FIG. 26 depicts another exemplary wafer cleaning device;

FIG. 27 depicts another exemplary wafer cleaning device;

FIG. 28 depicts another exemplary wafer cleaning device;

FIG. 29 depicts another exemplary wafer cleaning device;

FIG. 30 depicts another exemplary wafer cleaning device;

FIG. 31 depicts another exemplary wafer cleaning device;

FIG. 32 depicts the circumstance where full and equal cleaning effectsare to be derived in the present invention;

FIG. 33 depicts an example of a algorithm described in the presentinvention;

FIG. 34 depicts an architectural control system of the presentinvention;

TABLE. 35 depicts example results of wafer rotation speed calculatedusing the algorithm in present invention;

TABLE. 36 depicts example results of plate rotation speed calculatedusing the algorithm in present invention;

TABLE. 37 depicts example results plate rotation speed calculated usingthe algorithm in present invention.

DETAILED DESCRIPTION OF THE INVENTION

In one exemplary embodiment, FIGS. 1A to 1C show the detail of the wafercleaning device using a rotating plate. The wafer cleaning deviceconsists of wafer 1010, plate 1008 being rotated by rotation drivingmechanism 1004, and nozzle 1012 delivering cleaning chemicals orde-ionized water 1032. Plate 1008 is placed parallel to surface of wafer1010, and can be moved in direction parallel to surface of wafer 1010.The rotating plate will make chemical fluid between rotating plate 1008and wafer 1010 be rotated, which will enhance the cleaning efficiency.The gap between rotating plate 1008 and wafer 1010 is in the range of0.1 mm to 10 mm, preferred 2 mm. A detail description will be performedin FIG. 2A to 2E. During the cleaning process, wafer 1010 can be rotatedaround the wafer center at rotating speed 1, and plate 1004 is rotatedat rotating speed of 2. Plate 1008 can move in lateral direction at aconstant speed or changing speed, the lateral moving speed can be sethigh when rotating plate 1008 moves to position of wafer center, and canbe set low when rotating plate 1008 moves to position of wafer edge.Rotating speed 1 of wafer 1010 can be constant speed or changing speed,the rotating speed 1 can be set high when rotating plate 1008 moves to aposition of wafer center, and can be set low when rotating plate 1008moves to a position of wafer edge.

FIGS. 2A to 2E show the flow status of cleaning chemicals or fluid 1032during cleaning process. As shown in FIG. 2A, when the same point atwafer moves from A to E, the direction of fluid passing the same pointof wafer 2008 changes from A to B, C, D, and E, i.e. from 180 degree to0 degree. In the same way, when the same point at wafer moves from E toA, the direction of fluid passing the same point of wafer 2008 changesfrom E to F, G, H, A, i.e. from 0 degree to 180 degrees. FIG. 2B showsthat particles 2044 are located in trench 2040 and via 2042. When fluiddirection changes as shown in FIG. 2C to 2E, the particles in trench andvia will be more efficiently removed away.

One example of chemicals being used to remove the particle andcontamination are shown as follows:

Organic Material Removal: H₂SO₄:H₂O₂=4:1

Particle Reduction: NH₄OH:H₂O₂:H₂O=1:1:5

Metal Contamination Removal: HCl:H₂O₂:H₂O=1:1:6

Oxide Removal: Oxide Removal=HF:H₂O=1:100

FIG. 3 shows another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 1A and 1B, except that wafer 3010 is holdby laterally movable chuck 3020, and a ultra sonic or mega sonictransducer 3006 is attached above rotating plate 3008. Chuck 3020 can berotated by driving mechanism 3022, and laterally moved by movingmechanism 3026 and guider 3024. Guide 3024 can straight guider, orcurved guider. Ultra sonic or mega sonic device is used to generatemechanical vibrating energy, which is further transmitted to wafersurface through rotating plate 3008 and chemical fluid 3032. Transducer3006 needs electrical brushes to feed in and out electrical current todriving transducer itself since transducer 3006 is in rotation statusduring cleaning process. The frequency of transducer can be set at ultrasonic range and mega sonic range, depending on the particle to becleaned. The larger the particle size is, the lower frequency should beused. Ultra sonic range is from 20 kHz to 200 kHz, and mega sonic rangeis from 200 kHz to 10 MHz. Also frequency of mechanical wave can bealternated either one at a time in succession or concurrently in orderto clean different size of particles on the same substrate or wafer.

FIG. 4 shows another embodiment of wafer cleaning device using arotating plate. The embodiment is similar to that shown in FIGS. 1A and1B, except that rotating plate 4008 is placed not fully parallel towafer surface, instead, having an angle of. Angle is in the range of 0to 15 degrees.

FIG. 5A to 5B shows detail of embodiment of rotating plate and ultrasonic or mega sonic device according to the present invention. Rotatingplate described in FIG. 1A and FIG. 3 is a plane. However, the rotatingplate can be shaped in multiple half columns as shown in FIGS. 5A and5B. The mechanical wave transmitted by surface of half column isdiverged in different angle as shown in FIG. 5A. Such divergedmechanical wave is more efficient to separate particles from trench wallor via wall. Since half cycle column on rotating plate 5008 changes theorientation angle as plate 5008 rotating, the mechanical wave patternchanges the direction in 360 degrees in one turn of rotation, which willfurther enhance the cleaning efficiency with less ultra sonic or megasonic energy, therefore less damage to device structure. At the sametime, the multiple half cycle columns will further enhance the chemicalfluid 1032 moving in spiral direction, which creates higher surfacespeed of fluid over surface of wafer 1010. In summary, the presentinvention create three effects during cleaning process:

-   -   1) half cycle column structure on rotating plate 5008 create        diverged ultra sonic or mega sonic wave;    -   2) such diverged mechanical wave pattern further rotate around        the rotation axis of rotating plate 5008;    -   3) fluid moves around the rotation axis of rotating plate 5008.

FIGS. 6A and 6B show another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 6008 are elliptical columns instead of half cyclecolumns.

FIGS. 7A and 7B show another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 7008 are less half cycle columns instead of half cyclecolumns.

FIGS. 8A and 8B show another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 8008 are triangular columns instead of half cyclecolumns.

FIGS. 9A and 9B show another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 9008 are trapezoid columns instead of half cycle columns.

FIGS. 10A and 10B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 10008 are rectangular columns instead of half cyclecolumns.

FIGS. 11A and 11B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 11008 are double triangular columns instead of half cyclecolumns.

FIGS. 12A and 12B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 12008 are half octagon columns instead of half cyclecolumns.

FIGS. 13A and 13B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that columns onrotating plate 13008 are saddle columns instead of half cycle columns.

FIGS. 14A and 14B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 5A and 5B, except that patterns onrotating plate are individual half spheres instead of grooved half cyclecolumns.

FIGS. 15A and 15B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 14A and 14B, except that patterns onrotating plate are individual pyramids instead of individual halfspheres.

FIGS. 16A and 16B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 14A and 14B, except that patterns onrotating plate are half pyramids instead of individual half spheres.

FIGS. 17A and 17B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The pattern onrotating plate 17008 is single convex column.

FIGS. 18A and 18B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The pattern onrotating plate 18008 is single concave column.

FIGS. 19A and 19B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The pattern onrotating plate 19008 is one convex column and one concave column.

FIGS. 20A and 20B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. It consists ofrotating plate 20008, static positioned ultra sonic or mega sonictransducer 20006, and driving mechanism 20004 driving rotating plate20008. There is hole 20030 on transducer 20006 for introducing chemicalfluid or de-ionized water 20032. The chemical fluid or de-ionized water20032 is further flowed out through gap between rotating plate 20008 andtransducer 20006 to reach surface of wafer underneath. Ultra sonic ormega sonic energy is transmitted from transducer 20006 through chemicalfluid 20032, rotating plate 20008, and chemical fluid 1032 to reachsurface of wafer 1010. The advantage of this embodiment is thattransducer 20006 stays static, and therefore does not need electricalbrushes to feed in and out electrical current to drive transducer 20006.Pattern on rotating plate 20032 are formed by multiple half cyclecolumns.

FIGS. 21A and 21B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 20A and 20B, except that there arethrough holes 21009 distributed on half cycle columns in rotating plate21008. The function of holes 21009 is to feed chemical fluid 21032 towafer surface underneath.

FIGS. 22A and 22B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. The embodiment issimilar to that shown in FIGS. 20A and 20B, except that there arethrough holes 22009 distributed on grooves between half cycle columns inrotating plate 22008. The function of holes 22009 is to feed chemicalfluid 22032 to wafer surface underneath.

The shape of rotating plate shown in above embodiments is cycle.However, the contour of rotating plate can be triangle as shown in FIG.23A, and can be square as shown in FIG. 23B, eight-angle as shown inFIG. 23C, and elliptical as shown in FIG. 23D.

FIGS. 24A and 24C show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. It consists ofrotating plate 24008, static positioned ultra sonic or mega sonictransducer 24006, driving mechanism 24004 driving rotating plate 24008,lateral moving guide 24002, lateral driving mechanism 24000, and nozzle24012 for delivering chemical fluid. Transducer 24006 and rotation plate24008 are droved in lateral direction back and forth across center ofwafer 24010 by lateral driving mechanism 24000 as shown in FIG. 24B, anddroved in lateral direction back and forth on a trajectory offset H fromcenter of wafer 24010 by lateral driving mechanism 24000 as shown inFIG. 24C.

FIGS. 25A and 25B show another embodiment of wafer cleaning device usinga rotating plate according to the present invention. It consists ofrotating plate 25008, static positioned ultra sonic or mega sonictransducer 25006, driving mechanism 25004 driving rotating plate 25008,swing moving beam 25014, swing driving mechanism 25016, and nozzle 25012for delivering chemical fluid. Transducer 25006 and rotation plate 25008are swung left and right across center of wafer 25010 by swing drivingmechanism 25016 as shown in FIG. 25B, and swung in left and right on acurve offset H from center of wafer 25010 by swing driving mechanism25016 as shown in FIG. 25C. Nozzle 25012 are attached on swing beam25014, therefore nozzle is swung together with transducer 25006. By thisarrangement, chemicals can be constantly delivered to gap betweenrotating plate 25008 and wafer even the rotation plate 25008 is swungleft and right.

FIG. 26 shows another embodiment of wafer cleaning device using arotating plate according the present invention. The embodiment issimilar to those shown in FIG. 24A to 24C and FIG. 25A to 25B, exceptthat wafer 26010 and rotating plate 26008 are configured in verticaldirection.

FIG. 27 shows another embodiment of wafer cleaning device using arotating plate according the present invention. The embodiment issimilar to those shown in FIG. 26, except that two set of cleaningdevices are positioned on front side and backside of wafersimultaneously.

FIG. 28 shows another embodiment of wafer cleaning device using arotating plate according the present invention. The embodiment issimilar to those shown in FIG. 26, except that wafer 28010 and cleaningdevice are set at angle β. Angle β is set from 90 degree to 180 degree.

FIG. 29 shows another embodiment of wafer cleaning device using arotating plate according the present invention. The embodiment issimilar to those shown in FIG. 27, except that wafer 29010 and cleaningdevice are set at angle β. Angle β is set from 0 degree to 90 degree.

FIG. 30 shows another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to those shown in FIG. 24, except that rotating plate 30008 andtransducer 30006 are set at backside of wafer 30010.

FIG. 31 shows another embodiment of wafer cleaning device using arotating plate according to the present invention. The embodiment issimilar to those shown in FIG. 30, except that additional set ofrotating plate 31008 and transducer 31006 are set at front side of wafer31010.

FIG. 32 shows the circumstance where full and equal cleaning effects areto be derived in the present invention. A is a point on wafer thatoverlays with the leading edge of the vibrating plate in the directionof plate movement at a particular time t, O is the center of the plate,x is the distance between point A and the center of the wafer or thearticle to be cleaned, θ is the angle between the grooves on the plateand the diameter of the wafer or the article.

To ensure that all the points on the wafer or article are cleaned by theplate, the distance that the plate moves along the diameter of the waferor article while the wafer or article rotates a circle should be lessthan the diameter of the plate itself. Thus it can be derived that themaximum translational velocity (lateral speed) of the plate plate alongthe diameter of the wafer or article is:

$v = {\frac{2R_{2}\omega_{1}}{60}.}$

To ensure the full cleaning effect under the present invention, thevibrating plate in the present invention rotates at least π when a smallarea of interest on the wafer or article is in the range of the plate.In another word, the distance (d) between A and O in FIG. 32 must besmaller than the radius of the plate in the time that the plate rotatesπ.

Thus it is found that the condition d²=(x−vΔt−(x−R₂)cosω₁Δt)²+((x−R₂)sin ω₁Δt)²≦R₂ ² must be satisfied.

FIG. 33 shows an example of how the algorithm described above is appliedwith a set of inputs. The algorithm calculates for a space of operationbetween the x-axis and the part of the calculated curve below the x-axiswhere full cleaning effect is satisfied based on the input parameters,as highlighted by the dotted red circle.

FIG. 34 shows an architectural control system which is to be implementedin system software that allows the algorithm to check and recommend userinput and provides feedback to users.

TABLE. 35 shows example results of wafer rotation speed calculated usingthe algorithm in present invention, as a function of plate centerlocation relative to space, that satisfies the equal cleaning effect ofthe present invention under a circumstance where plate rotation speed isfixed and plate translational speed is varied.

TABLE. 36 shows example results of plate rotation speed calculated usingthe algorithm in present invention, as a function of plate centerlocation relative to space, that satisfies the equal cleaning effect ofthe present invention under a circumstance where wafer rotation speedand plate translational speed are fixed.

TABLE. 37 shows example results plate rotation speed calculated usingthe algorithm in present invention, as a function of both wafer rotationspeed and plate translational speed, that satisfies the full cleaningeffect of the present invention.

Although the present invention has been described with respect tocertain embodiments, examples, and applications, it will be apparent tothose skilled in the art that various modifications and changes may bemade without departing from the invention. For example, HF acid can becombined with other slat and acid to form electrolyte to reach the samepurpose.

TABLE 35 Rpm of plate is 90, fixed Position along the Radial radius ofwafer, cm Rpm of wafer velocity of plate, cm/s 15 1.5 0.25 12 2.2 0.37 93.6 0.60 6 6.5 1.08 3 20.0 3.33

TABLE 36 Rpm of wafer is 3 and radial velocity of plate is 0.5 cm/s,fixed Position along the radius of wafer, cm Rpm of plate 15 180 12 1209 75 6 40 3 15

TABLE 37 Rpm of wafer Translational velocity of plate, cm/s Rpm of plate1 0.17 60 2 0.33 120 3 0.50 180 4 0.67 240 5 0.83 300 6 1.00 360 7 1.17420 8 1.33 480 9 1.50 540 10 1.67 600

The invention claimed is:
 1. An apparatus for cleaning a wafer having atleast one surface comprising: a chuck for holding the wafer, the chuckbeing rotated by a first driving mechanism; a plate positioned adjacentto the wafer defining a gap therebetween, wherein said plate has asurface and the apparatus is configured to translate the plate acrossthe surface of the wafer in a direction parallel to the surface of thewafer; a mechanical wave transducer attached to said plate causing saidplate to vibrate, said mechanical wave transducer being a mega sonictransducer; and a second driving mechanism configured to rotate saidplate and said transducer attached to said plate while maintaining thegap between the plate and the wafer, wherein the second drivingmechanism is configured to rotate the plate and the transducer around anaxis vertical to said plate such that the following condition issatisfied: a distance d between point A and point O must be smaller thanthe radius of said plate in the time that the plate rotates π radian,wherein point A is a point on the wafer that overlays with the leadingedge of said plate in the direction of plate movement and point O is thecenter of said plate.
 2. The apparatus of claim 1, wherein said plate ispositioned parallel to the surface of the wafer.
 3. The apparatus ofclaim 1, wherein said plate moves in a straight line.
 4. The apparatusof claim 1, wherein said plate moves in a curved line.
 5. The apparatusof claim 1, wherein the wafer moves in a direction parallel to thesurface of said plate.
 6. The apparatus of claim 5, wherein the wafermoves in a straight line.
 7. The apparatus of claim 1, wherein the wafermoves in a curved line.
 8. The apparatus of claim 1, wherein the waferis rotated around the center of the wafer.
 9. The apparatus of claim 1,wherein said gap between said plate and the wafer is in the range of 0.1mm to 10 mm.
 10. The apparatus of claim 1, wherein the apparatus furthercomprising a nozzle to deliver chemical fluid onto the surface of thewafer.
 11. The apparatus of claim 10, wherein said nozzle is attachedtogether with said plate.
 12. The apparatus of claim 1, wherein thesurface of said plate is a plane.
 13. The apparatus of claim 1, whereinthe surface of said plate is formed by multiple half cycle columns. 14.The apparatus of claim 1, wherein the surface of said plate is formed bymultiple triangular columns.
 15. The apparatus of claim 1, wherein thesurface of said plate is formed by multiple rectangular columns.
 16. Theapparatus of claim 1, wherein the surface of said plate is formed bymultiple elliptical columns.
 17. The apparatus of claim 1, wherein thesurface of said plate is formed by single concave column.
 18. Theapparatus of claim 1, wherein the surface of said plate is formed bysingle convex column.
 19. The apparatus of claim 1, wherein the surfaceof said plate is formed by one convex column and one concave column. 20.The apparatus of claim 1, wherein the surface of said plate is formed bymultiple half spheres.
 21. The apparatus of claim 1, wherein the surfaceof said plate is formed by multiple pyramids.
 22. The apparatus of claim1, wherein the surface of said plate is formed by multiple half octagoncolumns.
 23. The apparatus of claim 1, wherein said mega sonictransducer has a frequency range of 200 kHz to 2 MHz.
 24. The apparatusof claim 1, wherein said plate has a plurality of holes to introducechemical fluid.
 25. The apparatus of claim 1, wherein said plate has acycle contour.
 26. The apparatus of claim 1, wherein said plate has atriangular contour.
 27. The apparatus of claim 1, wherein said plate hasa rectangular contour.
 28. The apparatus of claim 1, wherein said platehas an octagon contour.
 29. The apparatus of claim 1, wherein said platehas an elliptical contour.
 30. The apparatus of claim 1, wherein thewafer is set in a horizontal direction.
 31. The apparatus of claim 1,wherein the wafer is set in a vertical direction.
 32. The apparatus ofclaim 1, wherein the wafer is set at an angle relative to a horizontaldirection, and said angle is in the range of 0 to 90 degree.
 33. Theapparatus of claim 1, wherein said plate is set above the surface of thewafer.
 34. The apparatus of claim 1, wherein said plate is setunderneath the surface of the wafer.
 35. The apparatus of claim 1wherein the surface of the wafer is a first surface of the wafer,wherein the wafer comprises a second surface that is opposite to thefirst surface, wherein the plate is set above the first surface of thewafer, and wherein the apparatus comprises another plate that is setunderneath the second surface of the wafer.
 36. The apparatus of claim35, wherein the apparatus further comprising two nozzles to deliverchemical fluids, one set above the first surface of the wafer, andanother one nozzle set underneath second surface of the wafer.